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MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors * High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC * Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.1 40 150 - 55 ~ 150 Unit s V V V V V A A W C C R1 R2 E Equivalent Circuit C B Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature R1 10k R2 0.6k Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE700/701 : MJE702/703 Collector Cut-off Current : MJE700/701 : MJE702/703 Collector Cut-off Current Test Condition IC = - 10mA, IB = 0 Min. -60 -80 -100 -100 -100 -500 -2 750 750 100 -2.5 -2.8 -3 -1.2 -2.5 -3 V V V V V V Max. Units V V A A A A mA ICEO VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100C VBE = - 5V, IC = 0 VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = - 40mA VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A ICBO IEBO hFE Emitter Cut-off Current DC Current Gain : MJE700/702 : MJE701/703 : ALL DEVICES VCE(sat) Collector-Emitter Saturation Voltage : MJE700/702 : MJE701/703 : ALL DEVICES Base-Emitter On Voltage : MJE700/702 : MJE701/703 : ALL DEVICES VBE(on) (c)2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE700/701/702/703 Typical Characteristics -5 10k IB= -1000s VCE = -3V 0 0 s IB= -4 IC(A),COLLECTOR CURRENT -4 IB= -900s IB= -800s IB= -700s IB= -600s hFE, DC CURRENT GAIN -5 00s IB= -3 s IB= -200 1k -3 IB= -500s -2 IB= -100s 100 -1 -0 -0 -1 -2 -3 -4 10 -0.01 -0.1 -1 -10 V CE(V),COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 1000 IC = 500 IB f=0.1MHZ IE=0 Cob[pF], CAPACITANCE -10 100 VBE(sat) -1 10 V CE(sat) -0.1 -0.01 -0.1 -1 -10 1 -0.01 -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance -100 60 50 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION -10 40 0 10 s 1m s 5m s D .C . 30 -1 20 MJE700/701 MJE702/703 -0.1 -1 -10 -100 -1000 10 0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE700/701/702/703 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM LILENT SWITCHER(R) SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM VCXTM UHCTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. G |
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